Micron officially announces that it has finished testing and started production of LPDDR5X-8500 memory. Thanks to the new 1-beta node
Micron Technologytoday kicked off the first shipment of the first samples of its innovative technology DRAM 1β (1-beta), logically to selected smartphone manufacturers and chipset partners and, to have reached the availability for mass production with the technological node Most advanced DRAM in the world.
That’s right, because 1-beta node is currently the most advanced manufacturing process in the world. The leading company unveiled next-generation process technology for its low-power mobile memory, and, at double data transfer rates, approximately 5X (LPDDR5X), which offers top speeds of 8.5 gigabits (Gb) per second, impressive. The node offers significant gains in performance, bit density and energy efficiency, with wide market benefits. Beyond mobile telephony, the 1β node offers Low latency DRAM, low consumption and high performanceessential for supporting highly responsive applications, real-time services, personalization and contextualization of experiences, from intelligent vehicles to data centers. Let’s get into the details with Micron’s 1-Beta process.
The world’s most advanced DRAM processing node, 1β, represents an advancement of the company’s market leadership cemented with the volume shipment of 1α (1-alpha) in 2021. The node offers an energy efficiency improvement of approximately 15% and an improvement in bit density of over 35% with a capacity of 16 Gb per die.
Let us now leave room for the words of Scott DeBoerexecutive vice president of technology and products for Micron;
The launch of our 1-beta DRAM marks a further leap forward in memory innovation, thanks to our proprietary multi-patterning lithography combined with state-of-the-art process technology and advanced material capabilities. Offering the world’s most advanced DRAM technology with unprecedented bits per memory wafer, this node lays the groundwork to usher in a new generation of data-rich, intelligent and energy-efficient technologies, from edge to edge. cloud
Micron: 1-Beta process arrives for the LPDDR5X-8500
This milestone also follows Micron’s shipment of the world’s first 232-layer NAND in July, designed for unprecedented storage performance and areal density. With these new firsts, Micron continues to dictate the pace of the market in memory and storage innovations, both made possible by the company’s deep roots in cutting-edge research and development (R&D) and process technology. productive.
With LPDDR5X sampling, the mobile ecosystem will be the first to reap the benefits of the significant gains of 1β DRAM, which will unlock next-generation mobile innovation and advanced smartphone experiences, all while consuming less power. Thanks to the speed and density of 1β, the most disparate use cases will take advantage of the new features, high bandwidth, will be reactive and fluid like never before downloads, simultaneous launches and uses of 5G applications e you artificial intelligence (AI) data-intensive. In addition, 1β-based LPDDR5X will not only improve smartphone camera startup, night mode and portrait mode with speed and clarity, but It will enable high resolution, vibration-free 8K video recording and intuitive video editing inside the phone.
The low power consumption per bit of the 1β process technology offers the most efficient memory technology on the smartphone market. This allows smartphone manufacturers to design devices with more efficient battery life, a crucial aspect as consumers try to extend their batteries while using power-consuming and data-demanding applications. Energy savings are also allowed by the implementation of the new JEDEC techniques of dynamic extension of the voltage and frequency scaling (eDVFSC) on this LPDDR5X based on 1β. Adding eDVFSC to a level of frequency doubled, up to 3,200 megabits per secondprovides improved energy-saving controls to enable more efficient use of energy based on the unique patterns of end users.
Micron, with the 1-Beta node, has literally defied the laws of physics with sophisticated lithography and nanoproduction. Micron’s 1β node, the industry’s first, achieves greater memory capacity in a smaller footprint, with a lower cost per bit of data. As the industry has begun to shift to a new tool that uses extreme ultraviolet light to overcome these technical challenges, Micron drew on its proven capabilities in nano-manufacturing and state-of-the-art lithography to circumvent this still emerging technology.
This involves the application of proprietary and advanced multi-patterning techniques and the company’s diving skills to model these tiny features with the utmost precision. The increased capacity offered by this reduction will also allow devices with small form factors, such as smartphones and IoT devices, to fit more memory into compact spaces.
To gain a competitive advantage with 1β and 1α memories, In recent years, Micron has also aggressively advanced manufacturing excellence, engineering capabilities, and pioneering research and development. This acceleration of innovation first allowed Micron to launch its 1α node a year ahead of the competition, thereby establishing Micron’s leadership in both DRAM and NAND for the first time in the company’s history. Over the years, Micron has invested billions of dollars to transform its factories into state-of-the-art facilitieshighly automated, sustainable and driven by artificial intelligence.
Micron’s 1β DRAM node provides a versatile foundation to power the advancements of a connected world that needs fast, ubiquitous and energy-efficient memory to power digitization, optimization and automation.
The high-density, low-power memory produced on 1β enables a more energy efficient data flow between intelligent, data-hungry objects, systems and applications and greater intelligence. From the edge to the cloud. Over the next year, the company will begin to bring the rest of its portfolio to 1β in the embedded segments, data center, client, consumer, industriale e automotiveincluding graphics memory, high bandwidth memory and more.
The scalability of DRAMs was largely defined by the ability to deliver more memory and faster per square millimeter of semiconductor area, which requires reducing the circuitry to fit billions of memory cells into a fingernail-sized chip. With each process node, the semiconductor industry has shrunk devices every year or two for decades.
We will see how Micron with the 1-Beta process will optimize and enrich the market, and certainly we will be at the forefront to tell you about the first products that will use these memories. If you want to continue to know the latest news from the hardware world, keep following us. Greetings from TechGameWorld.com.
The article Micron 1-Beta: the trial for the LPDDR5X-8500 arrives comes from TechGameWorld.com.