The Micron company has released the world’s first 232-layer NAND, extending its technology leadership even further
Micron Technology, Inc. (here for more information on the company), is an American multinational based in Boise, Idaho, which produces different types of semiconductor devices. Among these we have DRAM memories, NAND and NOR Flash memories, and solid state storage units, (SSD). Micron also manufactures memory devices for consumers, marketed under the Crucial and Lexar brands. Together, Micron and Intel created the joint-venture IM Flash Technologieswhich produces memorie flash NAND. Micron was named one of the world’s 100 most innovative companies by Thomson Reuters in 2012 and 2013. Micron Technology is ranked in the top 5 semiconductor companies in the world.
Details on the first 232-layer NAND
Micron Technology announced today that it has started the mass production of the world’s first 232-layer NAND. Built with industry-leading innovations to deliver unprecedented performance for storage solutions. It features the highest area density in the industry and offers greater capacity and better energy efficiency than previous generations of Micron NAND. So we can enable best-in-class support for the most data-intensive use cases from client to cloud.
Statements regarding the new 232-layer NAND
Below are the first statements regarding Micron’s new 232-layer NAND.
Micron’s 232-layer NAND is a defining moment for storage innovation as the first proof of the ability to scale 3D NAND to more than 200 layers in production,
he has declared Scott DeBoer, executive vice president of technology and products for Micron. Who then added:
This breakthrough technology required extensive innovation, including advanced process capabilities to create structures with high aspect ratio, new advances in materials, and cutting-edge design improvements that are based on our market-leading 176-layer NAND technology.
Cutting-edge technology delivers unrivaled performance
As the world generates more data, customers must expand storage capacity and performance by reducing energy consumption and meeting stricter environmental sustainability requirements. Technology 232 Micron Layer NAND provides the high-performance storage needed to support advanced solutions. In addition to real-time services required in data centers and automotive applications, as well as responsive and engaging experiences on mobile devices, consumer electronics and PCs. This technological node allows the introduction of speed Industry’s fastest NAND I / O, which is 2.4 gigabytes per second (GB / s). This allows for low latency needs to be met. It also meets the high throughput of data-centric workloads such as artificial intelligence and machine learning, unstructured databases and real-time analytics, and cloud computing.
A speed never seen before
This speed represents a data transfer of the 50% faster compared to the faster interface enabled on Micron’s 176-layer node. Micron’s 232-layer NAND also offers a up to 100% higher write bandwidth and 75% more read bandwidth per die than the previous generation. These per-die benefits translate into performance and energy efficiency in SSDs and integrated NAND solutions. In addition, 232-layer NAND introduces the first production NAND TLC six floors in the world. It has the largest number of planes per die of any TLC flash and has independent reading capability in each plane. The combination of high I / O speed, read and write latency and Micron’s six-story architecture provides best-in-class data transfers in many configurations. This design ensures fewer collisions between read and write commands and improves the quality of service at the system level.
NV-LPDDR4
Micron’s 232-layer NAND is the first in production ad enable NV-LPDDR4, a low voltage interface that offers transfer savings per bit of more than 30% over previous I / O interfaces. As a result, 232-tier NAND solutions provide ideal support for mobile applications and deployments in the data center and intelligent edge network that must balance improved performance with low power consumption. The interface is also backward compatible to support legacy controllers and systems.
Compact shape
The compact form factor of the 232-layer NAND delivers to customers flexibility in their projects while allowing the highest TLC density per square millimeter ever produced (at 14.6 Gb / mm²). The density of the area is between 35% and 100% greater than competing TLC products on the market today. Shipped in a new 11.5mm x 13.5mm package, the 232-layer NAND features a package size 28% smaller than previous generations of Micron, making it the smaller NAND high density available. Higher density in a smaller footprint minimizes board space for a diverse set of deployments.
Next generation NAND enables innovation in all markets
Micron has sustained technology leadership with subsequent market advancements in counting NAND levels that enable benefits such as longer battery life. and more compact storage for mobile devices, better cloud computing performance and faster formation of artificial intelligence models,
he has declared Sumit All , Chief Business Officer at Micron. Who then added:
Our 232-tier NAND is the new foundation and standard for end-to-end storage innovation driving digital transformation across industries.
The development of the 232-layer NAND is the result of Micron’s leadership in research, development and process technology advancements. The revolutionary capabilities of this NAND will enable customers to deliver more innovative solutions in data centers, thinner and lighter laptops, the latest mobile devices and across the intelligent edge.
Availability
The 232 Micron Layer NAND is now in series production at the company’s factory in Singapore. It is initially shipped to customers in the form of components and via its consumer product line Crucial SSD. Further product and availability announcements will follow.
And you? What do you think of the Micron’s world’s first 232-layer NAND? Let us know with a comment and stay tuned to TechGameWorld.com for more news and reviews from the world of technology (and more!).
The article Micron: the world’s first 232-layer NAND presented comes from TechGameWorld.com.